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? semiconductor components industries, llc, 2002 january, 2002 rev. 7 1 publication order number: ncs2001/d ncs2001 0.9 v, rail-to-rail, single operational amplifier the ncs2001 is an industry first subone volt operational amplifier that features a railtorail common mode input voltage range, along with railtorail output drive capability. this amplifier is guaranteed to be fully operational down to 0.9 v, providing an ideal solution for powering applications from a single cell nickel cadmium (nicd) or nickel metal hydride (nimh) battery. additional features include no output phase reversal with overdriven inputs, trimmed input offset voltage of 0.5 mv, extremely low input bias current of 40 pa, and a unity gain bandwidth of 1.4 mhz at 5.0 v. the tiny ncs2001 is the ideal solution for small portable electronic applications and is available in the space saving sot235 and sc705 packages with two industry standard pinouts. features ? 0.9 v guaranteed operation ? railtorail common mode input voltage range ? railtorail output drive capability ? no output phase reversal for overdriven input signals ? 0.5 mv trimmed input offset ? 10 pa input bias current ? 1.4 mhz unity gain bandwidth at 2.5 v, 1.1 mhz at 0.5 v ? tiny sc705 and sot235 packages typical applications ? single cell nicd/nimh battery powered applications ? cellular telephones ? pagers ? personal digital assistants ? electronic games ? digital cameras ? camcorders ? hand held instruments figure 1. typical application this device contains 63 active transistors. - + 0.8 v to 7.0 v rail to rail input rail to rail output ordering information http://onsemi.com sot235 (tsop5/sc595) sn suffix case 483 pin connections 1 v out v cc noninverting input 2 3 5 4 v ee inverting input style 1 pinout (sn1t1, sq1t1) + 1 v out v ee noninverting input 2 3 5 4 v cc inverting input style 2 pinout (sn2t1, sq2t1) + marking diagrams 1 5 aaxyw x = g for sn1 h for sn2 i for sq1 j for sq2 1 2 3 4 5 sc705 (sc88a /sot353 sq suffix case 419a aax 1 5 1 5 y = year w = work week see detailed ordering and shipping information in the dimensions section on page 15 of this data sheet.
ncs2001 http://onsemi.com 2 maximum ratings rating symbol value unit supply voltage (v cc to v ee ) v s 7.0 v input differential voltage range (note 1) v idr v ee 300 mv to 7.0 v v input common mode voltage range (note 1) v icr v ee 300 mv to 7.0 v v output short circuit duration (note 2) t sc indefinite sec junction temperature t j 150 c power dissipation and thermal characteristics sot235 package thermal resistance, junction to air power dissipation @ t a = 70 c sc705 package thermal resistance, junction to air power dissipation @ t a = 70 c r ja p d r ja p d 235 340 280 286 c/w mw c/w mw storage temperature range t stg 65 to 150 c esd protection at any pin human body model (note 3) v esd 2000 v 1. either or both inputs should not exceed the range of v ee 300 mv to v ee +7.0 v. 2. maximum package power dissipation limits must be observed to ensure that the maximum junction temperature is not exceeded. t j = t a + (p d r ja ) 3. esd data available upon request. dc electrical characteristics (v cc = 2.5 v, v ee = 2.5 v, v cm = v o = 0 v, r l to gnd, t a = 25 c unless otherwise noted.) characteristics symbol min typ max unit input offset voltage v cc = 0.45 v, v ee = 0.45 v t a = 25 c t a = 0 c to 70 c t a = 40 c to 105 c v cc = 1.5 v, v ee = 1.5 v t a = 25 c t a = 0 c to 70 c t a = 40 c to 105 c v cc = 2.5 v, v ee = 2.5 v t a = 25 c t a = 0 c to 70 c t a = 40 c to 105 c v io 6.0 8.5 9.5 6.0 7.0 7.5 6.0 7.5 7.5 0.5 0.5 0.5 6.0 8.5 9.5 6.0 7.0 7.5 6.0 7.5 7.5 mv input offset voltage temperature coefficient (r s = 50) t a = 40 c to 105 c d v io / d t 8.0 m v/ c input bias current (v cc = 1.0 v to 5.0 v) i ib 10 pa input common mode voltage range v icr v ee to v cc v large signal voltage gain v cc = 0.45 v, v ee = 0.45 v r l = 10 k r l = 2.0 k v cc = 1.5 v, v ee = 1.5 v r l = 10 k r l = 2.0 k v cc = 2.5 v, v ee = 2.5 v r l = 10 k r l = 2.0 k a vol 20 15 40 20 40 40 40 40 kv/v
ncs2001 http://onsemi.com 3 dc electrical characteristics (continued) (v cc = 2.5 v, v ee = 2.5 v, v cm = v o = 0 v, r l to gnd, t a = 25 c unless otherwise noted.) characteristics unit max typ min symbol output voltage swing, high state output (v id = +0.5 v) v cc = 0.45 v, v ee = 0.45 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = 40 c to 105 c r l = 10 k r l = 2.0 k v cc = 1.5 v, v ee = 1.5 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = 40 c to 105 c r l = 10 k r l = 2.0 k v cc = 2.5 v, v ee = 2.5 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = 40 c to 105 c r l = 10 k r l = 2.0 k v oh 0.40 0.35 0.40 0.35 0.40 0.35 1.45 1.40 1.45 1.40 1.45 1.40 2.45 2.40 2.45 2.40 2.45 2.40 0.494 0.466 1.498 1.480 2.498 2.475 v output voltage swing, low state output (v id = 0.5 v) v cc = 0.45 v, v ee = 0.45 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = 40 c to 105 c r l = 10 k r l = 2.0 k v cc = 1.5 v, v ee = 1.5 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = 40 c to 105 c r l = 10 k r l = 2.0 k v cc = 2.5 v, v ee = 2.5 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = 40 c to 105 c r l = 10 k r l = 2.0 k v ol 0.494 0.480 1.493 1.480 2.492 2.479 0.40 0.35 0.40 0.35 0.40 0.35 1.45 1.40 1.45 1.40 1.45 1.40 2.45 2.40 2.45 2.40 2.45 2.40 v
ncs2001 http://onsemi.com 4 dc electrical characteristics (continued) (v cc = 2.5 v, v ee = 2.5 v, v cm = v o = 0 v, r l to gnd, t a = 25 c unless otherwise noted.) characteristics unit max typ min symbol common mode rejection ratio (v in = 0 to 5.0 v) cmrr 60 70 db power supply rejection ratio (v cc = 0.5 v to 2.5 v, v ee = 2.5 v) psrr 55 65 db output short circuit current v cc = 0.45 v, v ee = 0.45 v, v id = 0.4 v source current high output state sink current low output state v cc = 1.5 v, v ee = 1.5 v, v id = 0.5 v source current high output state sink current low output state v cc = 2.5 v, v ee = 2.5 v, v id = 0.5 v source current high output state sink current low output state i sc 0.5 15 40 1.2 3.0 29 40 76 96 1.5 20 50 ma power supply current (per amplifier, v o = 0 v) v cc = 0.45 v, v ee = 0.45 v t a = 25 c t a = 0 c to 70 c t a = 40 c to 105 c v cc = 1.5 v, v ee = 1.5 v t a = 25 c t a = 0 c to 70 c t a = 40 c to 105 c v cc = 2.5 v, v ee = 2.5 v t a = 25 c t a = 0 c to 70 c t a = 40 c to 105 c i d 0.51 0.72 0.82 1.10 1.10 1.10 1.40 1.40 1.40 1.50 1.50 1.50 ma ac electrical characteristics (v cc = 2.5 v, v ee = 2.5 v, v cm = v o = 0 v, r l to gnd, t a = 25 c unless otherwise noted.) characteristics symbol min typ max unit differential input resistance (v cm = 0 v) r in 1.0 tera w differential input capacitance (v cm = 0 v) c in 3.0 pf equivalent input noise voltage (f = 1.0 khz) e n 100 nv/ hz gain bandwidth product (f = 100 khz) v cc = 0.45 v, v ee = 0.45 v v cc = 1.5 v, v ee = 1.5 v v cc = 2.5 v, v ee = 2.5 v gbw 0.5 1.1 1.3 1.4 mhz gain margin (r l = 10 k, c l = 5.0 pf) am 6.5 db phase margin (r l = 10 k, c l = 5.0 pf) f m 60 deg power bandwidth (v o = 4.0 vpp, r l = 2.0 k, thd = 1.0%, a v = 1.0) bw p 80 khz total harmonic distortion (v o = 4.0 vpp, r l = 2.0 k, a v = 1.0) f = 1.0 khz f = 10 khz thd 0.008 0.08 % slew rate (v s = 2.5 v, v o = 2.0 v to 2.0 v, r l = 2.0 k, a v = 1.0) positive slope negative slope sr 1.0 1.0 1.6 1.6 6.0 6.0 v/ m s
ncs2001 http://onsemi.com 5 1.0 20 80 10 k 60 100 k 1.0 k 100 1.0 m 40 0 10 v cc = 2.5 v v ee = 2.5 v r l = 10 k to gnd t a = 25 c 100 10 m phase margin = 60 gain phase 0 45 90 135 180 t, time (1.0 m s/div) t, time (500 ns/div) v s = 2.5 v r l = 10 k c l = 10 pf a v = 1.0 t a = 25 c t a , ambient temperature ( c) figure 2. split supply output saturation vs. load resistance figure 3. split supply output saturation vs. load current figure 4. input bias current vs. temperature figure 5. gain and phase vs. frequency figure 6. transient response figure 7. slew rate 0 100 1.0 k 10 k 100 k 1.0 m r l , load resistance ( ) 0.2 0.4 0.6 0.6 0.4 0.2 0 v cc v ee high state output sourcing current low state output sinking current v cc = 2.5 v v ee = 2.5 v r l to gnd t a = 25 c 0 0 2.0 8.0 10 12 i l , load current (ma) 0.1 0.2 0.3 0.3 0.2 0.1 0 v cc v ee high state output sourcing current low state output sinking current v cc = 2.5 v v ee = 2.5 v i l to gnd t a = 25 c 4.0 6.0 v s = 2.5 v a v = 1.0 r l = 10 k c l = 10 pf t a = 25 c a vol , gain (db) v sat , output saturation voltage (v) i ib , input current (pa) f, frequency (hz) f m, excess phase ( ) 1000 100 1.0 0 0 25 50 75 100 125 10 v cc = 2.5 v v ee = 2.5 v 500 mv/div 50 mv/div v sat , output saturation voltage (v)
ncs2001 http://onsemi.com 6 i d , supply current (ma) 1 0 1.0 k f, frequency (hz) 2 3 4 5 6 10 k 100 k 1.0 m 0 10 20 30 40 50 60 70 80 10 100 1.0 k 10 k 100 k 1.0 m 10 m f, frequency (hz) v s = 1.5 v f, frequency (hz) figure 8. output voltage vs. frequency figure 9. common mode rejection vs. frequency figure 10. power supply rejection vs. frequency figure 11. output short circuit sinking current vs. supply voltage v s = 2.5 v v s = 0.5 v a v = 1.0 r l = 10 k t a = 25 c v cc = 2.5 v v ee = 2.5 v t a = 25 c v o, output voltage (v pp ) psr, power supply rejection (db) v s , supply voltage (v) t a = 125 c t a = 25 c t a = 55 c figure 12. output short circuit sourcing current vs. supply voltage figure 13. supply current vs. supply voltage 100 10 100 1.0 k 10 k 100 k 1.0 m 10 m 80 60 40 20 0 psr + psr v cc = 2.5 v v ee = 2.5 v t a = 25 c 0 1.0 2.0 2.5 0.5 1.5 1.2 1.0 0.8 0.6 0.4 0.2 0 v s, supply voltage (v) v s, supply voltage (v) 0 1.0 2.0 2.5 0.5 1.5 200 160 120 80 40 0 3.0 3.5 0 1.0 2.0 2.5 0.5 1.5 200 160 120 80 40 0 3.0 3.5 40 c 25 c 85 c 40 c 25 c 85 c output pulsed test at 3% duty cycle output pulsed test at 3% duty cycle cmr, common mode rejection (db) ii sc i, output short circuit current (ma) i isc i, output short circuit current (ma)
ncs2001 http://onsemi.com 7 2.0 50 25 0 25 50 75 100 1.5 1.0 0.5 0 125 t a , ambient temperature ( c) v cc = 2.5 v v ee = 2.5 v r l = 10 k c l = 10 pf t a , ambient temperature ( c) 2.0 50 25 0 25 50 75 100 1.5 1.0 0.5 0 125 r l = 10 k c l = 10 pf t a = 25 c +slew rate, v s = 0.45 v slew rate, v s = 2.5 v slew rate, v s = 0.45 v 10 1.0 0.01 0.1 0.001 f, frequency (hz) 10 1.0 k 100 100 k 10 k v s = 2.5 v v out = 4.0 v pp r l = 2.0 k t a = 25 c figure 14. total harmonic distortion vs. frequency with 1.0 v supply figure 15. total harmonic distortion vs. frequency with 1.0 v supply figure 16. total harmonic distortion vs. frequency with 5.0 v supply figure 17. total harmonic distortion vs. frequency with 5.0 v supply f, frequency (hz) f, frequency (hz) f, frequency (hz) 10 10 1.0 1.0 k 100 0.1 0.01 10 k 100 k r l = 2.0 k t a = 25 c a v = 1.0 a v = 10 a v = 100 a v = 1000 10 1.0 k 10 k 100 100 k 10 1.0 0.1 0.01 0.01 0.001 0.1 1.0 10 10 1.0 k 100 100 k 10 k v s = 2.5 v v out = 4.0 v pp r l = 10 k t a = 25 c figure 18. slew rate vs. temperature figure 19. gain bandwidth product vs. temperature +slew rate, v s = 2.5 v thd, total harmonic distortion (%) thd, total harmonic distortion (%) thd, total harmonic distortion (%) thd, total harmonic distortion (%) gbw, gain bandwidth product (mhz) sr, slew rate (v/ m s) v s = 0.5 v v out = 0.4 v pp r l = 10 k t a = 25 c v s = 0.5 v v out = 0.4 v pp a v = 1.0 a v = 10 a v = 100 a v = 1000 a v = 1.0 a v = 10 a v = 100 a v = 1000 a v = 1.0 a v = 10 a v = 100 a v = 1000
ncs2001 http://onsemi.com 8 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 f m, phase margin ( ) v s = 2.5 v v s = 0.5 v 40 20 0 20 40 60 180 140 100 60 10 100 1.0 k 100 k phase margin gain margin 10 k 0 10 20 30 40 60 50 70 v cc = 2.5 v v ee = 2.5 v r l = 10 k c l = 10 pf t a = 25 c 0 10 20 30 40 60 50 70 phase margin gain margin 80 0 60 40 20 80 0 60 40 20 phase margin gain margin 50 25 0 25 50 75 100 125 80 0 60 40 20 v cc = 2.5 v v ee = 2.5 v r l = 10 k c l = 10 pf t a , ambient temperature ( c) r t , differential source resistance ( w ) figure 20. voltage gain and phase vs. frequency figure 21. gain and phase margin vs. temperature figure 22. gain and phase margin vs. differential source resistance c l , output load capacitance (pf) figure 23. gain and phase margin vs. output load capacitance a v = 100 v cc = 2.5 v v ee = 2.5 v r l = 10 k to gnd t a = 25 c r l = 10 k t a = 25 c f, frequency (hz) 80 0 60 40 20 1.0 100 1000 10 10 k 100 k 1.0 m 10 m 100 m figure 24. output voltage swing vs. supply voltage 0 0.5 v s , supply voltage (v) 8.0 0 6.0 4.0 2.0 r l = 10 k t a = 25 c split supplies 220 260 80 0 60 40 20 v s , supply voltage (v) phase margin figure 25. gain and phase margin vs. supply voltage 80 0 60 40 20 gain margin r l = 10 k c l = 10 pf t a = 25 c am, gain margin (db) f m, excess phase ( ) a vol , gain (db) a v , gain margin (db) f m, phase margin ( ) am, gain margin (db) f m, phase margin ( ) f m, phase margin ( ) a m , gain margin (db) v out , output volltage (v pp ) v s = 2.5 v v s = 0.5 v 1.0 1.5 2.0 2.5 3.0 3.5
ncs2001 http://onsemi.com 9 0 0.5 v s , supply voltage (v) 1.0 1.5 2.0 2.5 0 v s , supply voltage (v) 2.0 2.5 1.5 1.0 3.0 0.5 2.0 1.0 3.0 1.0 2.0 3.0 v io = 5.0 mv r l = c l = 0 a v = 1.0 t a = 25 c 40 60 0 20 80 100 figure 26. open loop voltage gain vs. supply voltage t a = 25 c r l = 10 k r l = 2.0 k figure 27. input offset voltage vs. common mode input voltage range v s = 2.5 v figure 28. input offset voltage vs. common mode input voltage range, v s = 0.45 v figure 29. commonmode input voltage range vs. power supply voltage 10 0 15 5 5 20 20 v cm , common mode input voltage range (v) v io , input offset voltage (mv) 3.0 1.0 2.0 0 1.0 3.0 2.0 10 v s = 2.5 v r l = c l = 0 a v = 1.0 t a = 25 c 0 0.5 0.1 0.2 0.3 15 5 20 10 10 20 0.4 15 5 0 0.1 0.2 0.3 0.4 0.5 v cm , common mode input voltage range (v) v io , input offset voltage (mv) 15 a vol , open loop gain (db) 0.35 v s = 0.45 v r l = c l = 0 a v = 1.0 t a = 25 c v cm , common mode input voltage range (v)
ncs2001 http://onsemi.com 10 application information and operating description general information the ncs2001 is an industry first railtorail input, railtorail output amplifier that features guaranteed sub one volt operation. this unique feature set is achieved with the use of a modified analog cmos process that allows the implementation of depletion mosfet devices. the amplifier has a 1.0 mhz gain bandwidth product, 2.2 v/ m s slew rate and is operational over a power supply range less than 0.9 v to as high as 7.0 v. inputs the input topology chosen for this device series is unconventional when compared to most low voltage operational amplifiers. it consists of an nchannel depletion mode differential transistor pair that drives a folded cascade stage and current mirror. this configuration extends the input common mode voltage range to encompass the v ee and v cc power supply rails, even when powered from a combined total of less than 0.9 volts. figure 27 and 28 show the input common mode voltage range versus power supply voltage. the differential input stage is laser trimmed in order to minimize offset voltage. the nchannel depletion mode mosfet input stage exhibits an extremely low input bias current of less than 10 pa. the input bias current versus temperature is shown in figure 4. either one or both inputs can be biased as low as v ee minus 300 mv to as high as 7.0 v without causing damage to the device. if the input common mode voltage range is exceeded, the output will not display a phase reversal. if the maximum input positive or negative voltage ratings are to be exceeded, a series resistor must be used to limit the input current to less than 2.0 ma. the ultra low input bias current of the ncs2001 allows the use of extremely high value source and feedback resistor without reducing the amplifier's gain accuracy. these high value resistors, in conjunction with the device input and printed circuit board parasitic capacitances c in , will add an additional pole to the single pole amplifier in figure 30. if low enough in frequency, this additional pole can reduce the phase margin and significantly increase the output settling time. the effects of c in , can be canceled by placing a zero into the feedback loop. this is accomplished with the addition of capacitor c fb . an approximate value for c fb can be calculated by: c fb r in c in r fb figure 30. input capacitance pole cancellation + - output r fb c in r in c fb c in = input and printed circuit board capacitance input output the output stage consists of complimentary p and n channel devices connected to provide railtorail output drive. w ith a 2.0 k load, the output can swing within 50 mv of either rail. it is also capable of supplying over 75 ma when powered from 5.0 v and 1.0 ma when powered from 0.9 v. when connected as a unity gain follower, the ncs2001 can directly drive capacitive loads in excess of 820 pf at room temperature without oscillating but with significantly reduced phase margin. the unity gain follower configuration exhibits the highest bandwidth and is most prone to oscillations when driving a high value capacitive load. the capacitive load in combination with the amplifier's output impedance, creates a phase lag that can result in an underdamped pulse response or a continuous oscillation. figure 32 shows the effect of driving a large capacitive load in a voltage follower type of setup. when driving capacitive loads exceeding 820 pf, it is recommended to place a low value isolation resistor between the output of the op amp and the load, as shown in figure 31. the series resistor isolates the capacitive load from the output and enhances the phase margin. refer to figure 33. larger values of r will result in a cleaner output waveform but excessively large values will degrade the large signal rise and fall time and reduce the output amplitude. depending upon the capacitor characteristics, the isolation resistor value will typically be between 50 to 500 ohms. the output drive capability for resistive and capacitive loads is shown in figures 2, 3, and 23. figure 31. capacitance load isolation + - output r isolation resistor r = 50 to 500 c l input note that the lowest phase margin is observed at cold temperature and low supply voltage.
ncs2001 http://onsemi.com 11 figure 32. small signal transient response with large capacitive load figure 33. small signal transient response with large capacitive load and isolation resistor. v s = 0.45 v v in = 0.8 vpp r = 0 c l = 820 pf a v = 1.0 t a = 25 c v in v out v in v out v s = 0.45 v v in = 0.8 vpp r = 51 c l = 820 pf a v = 1.0 t a = 25 c
ncs2001 http://onsemi.com 12 the noninverting input threshold levels are set so that the capacitor voltage oscillates between 1/3 and 2/3 of v cc . this requires the resistors r 1a , r 1b and r 2 to be of equal value. the following formula can be used to approximate the output frequency. r t 470 k r 2 470 k r 1b 470 k r 1a 470 k c t 1.0 nf 0.9 v f o = 1.5 khz 0.67 v cc r 1b 470 k v cc d 2 1n4148 f o - + - + 0.9 v f o 1 1.39 r t c t v cc 0.33 v cc 0 output voltage timing capacitor voltage v cc r 2 470 k d 1 1n4148 10 k 10 k 1.0 m cw r 1a 470 k c t 1.0 nf 0.67 v cc v cc 0.33 v cc 0 output voltage timing capacitor voltage 0.67 v cc v cc 0.33 v cc 0 output voltage timing capacitor voltage the timing capacitor c t will charge through diode d 2 and discharge through diode d 1 , allowing a variable duty cycle. the pulse width of the signal can be programmed by adjusting the value of the trimpot. the ca- pacitor voltage will oscillate between 1/3 and 2/3 of v cc , since all the resistors at the noninverting input are of equal value. clockwise, low duty cycle counterclockwise, high duty cycle figure 34. 0.9 v square wave oscillator figure 35. variable duty cycle pulse generator cww
ncs2001 http://onsemi.com 13 r 1 1.0 m r 2 1.0 m r 3 1.0 k c in 10 f 2.5 v 10,000 m f + - c eff. r 1 r 3 c in 2.5 v f l 1 2 r 1 c 1 200 hz f h 1 2 r f c f 4.0 khz a f 1 r f r 2 11 a f f l f h r 1 10 k r f 100 k r 2 10 k c f 400 pf 0.5 v 0.5 v c 1 80 nf v o + - v in figure 36. positive capacitance multiplier figure 37. 1.0 v voiceband filter
ncs2001 http://onsemi.com 14 i s v o 435 ma 34.7 mv 212 ma 36.9 mv 3.3 k r 3 1.0 k r l i s 1.0 v r 4 2.4 k v l v o for best performance, use low tolerance resistors. + - r sense r 5 1.0 k r 1 1.0 k r 6 r sense v cc + - v supply v in i sink v in r sense figure 38. high compliance current sink figure 39. high side current sense r 2 75
ncs2001 http://onsemi.com 15 ordering information device package shipping* ncs2001sn1t1 sot235 (tsop5/sc595) 3000 units on 7o reel ncs2001sn2t1 sot235 (tsop5/sc595) 3000 units on 7o reel ncs2001sq1t1 sc705 (sc88a/sot353) 3000 units on 7o reel ncs2001sq2t1 sc705 (sc88a/sot353) 3000 units on 7o reel
ncs2001 http://onsemi.com 16 minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. inches mm 0.028 0.7 0.074 1.9 0.037 0.95 0.037 0.95 0.094 2.4 0.039 1.0 thin sot235 (tsop5/sc595) sc705 (sc88a/sot353) 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm
ncs2001 http://onsemi.com 17 package dimensions sot235 (tsop5/sc595) n suffix plastic package case 48301 issue b notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. dim min max min max inches millimeters a 2.90 3.10 0.1142 0.1220 b 1.30 1.70 0.0512 0.0669 c 0.90 1.10 0.0354 0.0433 d 0.25 0.50 0.0098 0.0197 g 0.85 1.05 0.0335 0.0413 h 0.013 0.100 0.0005 0.0040 j 0.10 0.26 0.0040 0.0102 k 0.20 0.60 0.0079 0.0236 l 1.25 1.55 0.0493 0.0610 m 0 10 0 10 s 2.50 3.00 0.0985 0.1181 0.05 (0.002) 123 54 s a g l b d h c k m j
ncs2001 http://onsemi.com 18 package dimensions sc705 (sc88a/sot353) q suffix case 419a02 issue f notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a-01 obsolete. new standard 419a-02. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k b
ncs2001 http://onsemi.com 19 notes
ncs2001 http://onsemi.com 20 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ncs2001/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada

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